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Abstract
Rapid isothermal processing (RIP) is emerging as a reduced thermal budget processing technique. As compared to a stand alone rapid isothermal annealing unit, the integration of deposition system and rapid isothermal processing units is very attractive for the fabrication of next generation of devices and circuits. We have used an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides and in-situ metallization of InP capacitors. Based on high frequency capacitance-voltage (C-V) measurement of Al-SrF2-InP structure and scanning electron microscopic (SEM) study, improved ohmic contacts were observed in the case where InP surface was in-situ rapid isothermally cleaned before metallization.