The Role of Transmission Electron Microscopy (TEM) in the Development of Advanced Metallization Systems

N LewisGE Research and Development Center, P O Box 8, Schenectady, N Y12301, USA

K ShenaiGE Research and Development Center, P O Box 8, Schenectady, N Y12301, USA

G A SmithGE Research and Development Center, P O Box 8, Schenectady, N Y12301, USA

P A PiacenteGE Research and Development Center, P O Box 8, Schenectady, N Y12301, USA

Abstract

The capabilities of the transmission electron microscope are reviewed for studying advanced metallization systems. Two different metallization technologies used in the fabrication of advanced MOS devices are examined. The first of these consists of layered structures of TiSi₂/Si and TiSi₂/poly-Si/SiO₂/Si. The microstructure of these materials is investigated using cross-sectional and plan view TEM in order to understand the high temperature behaviour of TiSi₂ films. The second metallization system studied is WSi₂/poly-Si/SiO₂/Si formed by low pressure chemical vapour deposition (LPCVD). Both as-deposited and high-temperature annealed films are studied.

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The Role of Transmission Electron Microscopy (TEM) in the Development of Advanced Metallization Systems

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The Role of Transmission Electron Microscopy (TEM) in the Development of Advanced Metallization Systems

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