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B B Pal
B B Pal received the BSc (Hons) degree in Physics in 1965 from Presidency College, Calcutta, India, and the BTech, MTech, and PhD degrees in 1967, 1968, and 1975, respectively, from the Institute of Radio Physics and Electronics, Calcutta University.
He joined the Centre of Advanced Study in Radio Physics and Electronics as a Lecturer in 1971. He then joined the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi, India as a Reader in 1979, where he became a Professor in 1986. From April 1988 to March 1990 he was the Head of the Department. He has made many original contributions. He has suggested a new computer simulation technique and large signal analytical model for a double-avalanche region (DAR) IMPATT diode. He has significant contributions in the field of optical field-effect transistors. He also proposed a new avalanche photo-detector named the Photo-DOVATT. He formulated an empirical formula for the calculation of permittivity in quaternary semiconductors. He has more than 120 papers in journals and conference proceedings. His present areas of interest are III-V materials, high-speed and optoelectronics devices, and computer-aided device and circuit simulation.
Dr Pal is a foundation life member of the Semiconductor Society (India) and was a member of its Executive Committee during 1985–1987. He has also been elected Vice-President of the Society for two years beginning in 1989.
He is the member of the editorial board of seveial scientific journals.