Abstract
Recent advances in the researches on electronic transport in compound semiconductors are reviewed. Low-field transport In the bulk material leads to better estimates of material parameters, but there are problems with compensated semiconductors. Hot electron effects have gained a new dimension in submicron devices, transient dynamic response yielding a high drift velocity. Fine geometry control to within atomic dimensions in hetero-structures gives a two-dimensional electron gas with especially high low-temperature mobilities. Studies of electron transport here give a wealth of new information and provide opportunities for fast devices.
Indexing terms: