A Review of Photoelectric Properties of EL2 in Semi-Insulating Gallium Arsenide

Abstract

The well known defect EL2 in gallium arsenide is under intensive investigation currently due to its technological importance. Its photoelectric properties are briefly reviewed in this paper. Its location in the band gap and its electron capture cross section as well as photoionization cross section are well established. The transfer at low temperatures to an electrically non-active state EL2* under illumination with 1.15 eV light is its most remarkable property. This quenching EL2 → EL2* is a complex process. A microscopic model for the EL2 defect is suggested.

Indexing terms:

• Semi-insulating GaAs
• Photoelectric effect