Surface Passivation Technology for GaAs

Abstract

Saine of ths results available in literature on GaAs surface passivation are first presented. It is then shown how the Ga-As-O equilibrium phase diagram leads to the conclusion that the presence of excess Arsenic on the oxidized GaAs surface is responsible for the high density of interface states in the forbidden energy gap. Recent efforts to unpin the GaAs surface using photochemistry, surface chemical treatment and to obtain unpinned gallium oxide/GaAs interface by hydrogen and nitrogen plasma treatment are next discussed. Ths results obtained in our laboratory on MOS structures fabricated by a low temperature high pressure oxidation of GaAs in an atmosphere of oxygen and water vapor is also presented.

Indexing term:

• Surface passivation
• Gallium arsenide crystal