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Abstract
The modelling of sub-micron channel GaAs MESFET's, based on an electron velocity field characteristic derived from an asymmetric high-field distribution function is presented. Drift velocity, electric field, potential, and carrier density profiles along the MESFET channel are calculated. The channel pinch-off at the onset of saturation is explicitly lifted by the inclusion of high-mobility degradation, even in long channel MESFET's. MESFET I-V characteristics based on the given drift velocity expression are also computed. It is shown by comparison with experiment that the I-V model based on the correct velocity-field profile is superior to those models based on the linear transport theory of the Botzmann transport equation. A discussion of the difficulties in MESFET modelling which arise from intervalley electron transfer in GaAs is also presented.
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