GaAs MESFET Modelling Considering the Effect of Rapid Thermal Annealing

Abstract

An analytical modelling of the ion implanted GaAs MESFET is carried out considering the effect of diffusion of impurity ions due to rapid thermal annealing. The validity of the proposed model is demonstrated by comparing the estimated drain current with the experimental value. Thus, where the experimental drain-source currcnt at pinch-off is typically 64 mA for a particular GaAs MESFET, the theoretical value of the drain-source current for the sans dose, ion energy, anneal temperature and time is 60 mA. The model shows that the threshold voltage increases with anneal temperature and time at a particular dose for both depletion and enhancement devices. Transconductance is also higher in a normally ON device compared to the case where the diffusion of impurity ions due to annealing is not considered.

Indexing terms:

• GaAs MESFET modeling
• Rapid thermal anneuling