Resonant Tunnelling Bipolar Transistor (RTBT): New Functional Device for Electronics of the Future

Abstract

The development of Resonant Tunnelling Bipolar Transistor (RTBT), including multi-state RTBTs and their circuit applications are reviewed in this paper. Multi-state RTBTs, designed using the concept of sequential quenching of resonant tunnelling in a multiple quantum well structure, paved the path for novel circuits, such as the implementation of multiple valued logic. The complexity of conventional logic and signal processing circuits are also reduced by the use of RTBTs. Finally, recent results on superlattice-base transistors and their possible application potentialities are also discussed.

Indexing terms:

• Resonant tunnelling bipolar transistor
• Functional device