Computer Aided Modelling of High-Eiectron-Mobility-Phototransistor

Abstract

In recent years extensive studies have been carried out by the authors to investigate the ofTect of optical radiation on High-Electron-Mobility-Transistor (HEMT). It has been found that the devices are very attractive as high speed optical detectors. In this work a computer based analysis of the device has been carried out to study the effect of optical radiation on the sheet concentration of 2D-electron gas and the I-V characteristics of the device. It is seen that the absorption of optical radiation of suitable wavelength in the larger bandgap material results in the conductivity modulation of the channcl. The current-voltage characteristics of the devlcc can thus be controlled by the intensity of optical radiation.

Indexing terms:

• Computer aided modelling
• High electron mobility phototransistor