Abstract
Monolithically integrated optoelectronic circuits which combine photonic and electronic devices on the single semiconductor substrate, have the advantages of improved performance, smaller size, low cost and higher reliability as compared to conventional hybrid circuits. This paper reviews the recent developments in both GaAs and InP based optoelectronic integrated circuits. Several key technologies and the issues related to material and integrated processing for optoelectronic integration are addressed. A brief outline of the R&D work already carried out at CEERI in the area of III-V compound semiconductor devices and our future plan is also included.
Indexing terms: