A MOSFET—BJT Composite Unit: IETE Journal of Research: Vol 38, No 4

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Abstract

A new composite unit comprising of a MOSFET and a BJT has been devised. The unit exhibits a good temperature stability and an improved linearity of the transfer characteristics while retaining the high input resistance of the MOSFET. The static performance of the unit is reported.

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A MOSFET—BJT Composite Unit

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A MOSFET—BJT Composite Unit

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