Theory of Constant Current Phase of Reverse Recovery Transient for Measurement of Minority Carrier Lifetime in a Homojunction P⁺N Solar Cell

Abstract

It has been observed that when a p⁺-n junction diode is switched rapidly from forward to reverse direction, anamalously large current, which often destroys the diode, flows for short time. Experimental and theoretical investigations have shown that the large current surge is a consequence of the finite decay time of minority carriers stored during forward bias. Analysis of this result has stimulated development of devices such as charge storage diodes and some special types of varactor diode for frequency multiplication. In the present paper, an attempt has been made to develope theory of the constant current phase of reverse recovery transient, to include the p-n coupling effect in an homojunction solar cell for measurement of minority carrier lifetime.

Indexing terms:

• Homojunction solar cell
• Minority carrier life time
• Reverse recovery transient