Phase Distortion Assisted MITATT Design for Compensation of Performance Deterioration due to Tunnel Current

Abstract

A method for design of high frequency IMPATT, operating in MITATT mode is presented which can compensate for the deterioration in device performance due to loss of carrier build up phase delay caused by tunneling current. The results for 94 GHz Si DDR indicate that the device performance of MITATT diodes would be improved considerably with the modulation of diode design parameters based on phase distortion. The suggested method would provide a realistic approach for design consideration of any form of high frequency IMPATTs operating in mixed tunneling and avalanche mode.

Indexing terms:

• MITATT diode
• mm wave IMPATT