Abstract
Due to revived interest in mm wave technology, a lot of research work is going on, on the theoretical, experimental and technological innovation on mm wave Impatt diode. In this review, a search is made on the available theories on mm wave Impatt diode which helps in understanding the experimental results and also gives a physical insight to the device operation. Drift-diffusion model, MITATT mode operation, velocity-energy transport equation are the few tested so far. Sometimes, closed form solution does not give a good agreement with experiment and hence computer simulation is applied. Energy-momentum simulation for GaAs mm wave Impatt gives a better agreement with experiment compared to drift-diffusion model. However, for Si mm wave Impatt even simulation with conventional Impatt equations are good enough for experimental verification.
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