Abstract
A superlattice avalanche region IMPATT diode has been proposed. Superlattice structure has lower intrinsic noise than the bulk devices. The IMPATT diode consists of a superlattice structure for the avalanche region made of AlGaAs/GaAs system followed by a drift region made of GaAs. The large signal analysis shows high efficiency of the device (>25%) having a power density greater than 109 W/m2 in the X-band.
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