Optically Controlled Microwave Attenuator

Abstract

Optically controlled microwave attenuators in microstrip configuration have been described in the present paper. Important parameters viz effective photoconductivity and effective plasma depth have been calculated and presented for silicon and gallium arsenide. Also presented is the theoretical estimate of CW optically induced attenuation using high resistivity silicon. Experimental results for an attenuator in microstrip configuration fabricated on a silicon substrate have been obtained; these are in fair agreement with the theoretical estimate.

Indexing terms:

• Optically controlled attenuator