On the Estimation of Oxide Layer Breaking in a PET due to Annealing: IETE Journal of Research: Vol 42, No 2

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Abstract

A method for estimation of the percentage of interfacial oxide layer break-up in the emitter region of a polysilicon emitter transistor from a knowledge of the base saturation current is proposed. Values predicted by this method are compared with experimental results and good agreement is observed.

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On the Estimation of Oxide Layer Breaking in a PET due to Annealing

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On the Estimation of Oxide Layer Breaking in a PET due to Annealing

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