Barrier Height of MIS-Tunnel Diode in Presence of Exponential Distribution of Deep Level Impurities: IETE Journal of Research: Vol 43, No 6

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Abstract

The barrier height of MIS tunnel diode is studied considering exponentially distributed deep level impurities. The space charge density has been calculated as a prior requirement for the evaluation of the barrier height and found sensitive to the deep level parameters. The barrier height of the device is found to increase with deep level density.

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Barrier Height of MIS-Tunnel Diode in Presence of Exponential Distribution of Deep Level Impurities

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Barrier Height of MIS-Tunnel Diode in Presence of Exponential Distribution of Deep Level Impurities

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