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Abstract
A nonlinear analysis of the semiconductor laser has been performed taking into account second order nonlinearity in the photon density-dependent gain of the active medium. The nonlinear analysis has yielded modified formulae for some dynamic properties of the semiconductor laser such as damping rate and frequency of relaxation oscillation (RO) and direct modulation bandwidth. Variations of steady-state photon density, damping rate of RO and modulation bandwidth as functions of gain compression factor have been studied analytically in this paper.