Numerical Simulation for Estimating the Optically Controlled Characteristics of an Ion-Implanted Si-MESFET

Abstract

The paper presents a numerical model for determining the dc characteristic of an ion-implanted Si-MESFET under optically controlled condition. The model accounts for all the major effects that shape the characteristics of the device in the illuminated condition. For the first time a model has been developed for the optically controlled MESFET with non-uniformly doped channel to determine the channel voltage profile and the variation of the gate depletion width as well as the substrate depletion width in the channel as a function of position between source and drain. The model can also be utilised for estimating the drain current—drain voltage characteristics and the transfer characteristics of the device under dark and the illuminated condition. It also enables one to calculate the transconductance and the gate to source capacitance which are directly related to the cut-off frequency of the device.

Indexing terms:

• Si-MESFET
• Optical control
• Numerical simulation

Additional information

Notes on contributors

P Chakrabarti

P Chakrabarti, received the BTech and MTech degrees in Radio Physics and Electronics from the University of Calcutta, in 1981 and 1983, respectively, and PhD degree in Electronics Engineering from IT, B H U, Varanasi in 1988. He joined the Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, India in 1986 as an Assistant Professor and became Associate Professor in the same Department in 1988. Currently he is working as a Professor in the Department of Electronics Engineering, I T, B H U, Varanasi. He has published over 60 research papers in international journals. His current area of interest include theoretical modeling and simulation of semiconductor devices for high speed and integrated optoelectronic applications. Dr Chakrabarti is a recipient of the INSA Visiting Fellowship and the SERC Visiting Fellowship. Dr Chakrabarti is a lifetime member of the ISTE, IEI and OSI.

M Madheswaran

M Madheswaran, received the BE Degree from Madurai Kamaraj University in 1990, M E Degree from Birla Institute of Technology, Mesra, Ranchi in 1992, both in Electronics and Communication Engineering and PhD Degree in Electronics Engineering from the Institute of Technology, Banaras Hindu University, Varanasi, India in 1999.

He joined the Department of Electronics and Communication Engineering, Mohamed Sathak Engineering College, Kilakarai as Senior Lecturer in Jan 1993 and became an Assistant Professor in June 1993 and have worked till June 1998. Later, he joined as an Assistant Professor in the Department of Electronics and Communication Engineering, K S Rangasamy College of Technology, Tiruchengode, India in Feb 1999. He has also been the Branch Counsellor of the IEEE Student Branch, Mohamed Sathak Engineering College, Kilakarai during 1993 to 1996. He has authored over twenty research publications in International and National Journals and Conferences. His area of interest is theoretical modeling and simulation of high speed semiconductor devices for Integrated optoelectronic applications.

Dr Madheswaran is a life member of the Indian Society for Technical Education and Member of the Institution of Electrical and Electronics Engineers. He was awarded the Young Scientist Fellowship (YSF) by the Tamil Nadu State Council for Science and Technology in 1994 and Senior Research Fellowship (SRF) by the Council of Scientific and Industrial Research (CSIR), Government of India in 1996.

V Rajamani

V Rajamani, was born in Tirunelveli, Tamil Nadu. He received the BE degree in Electronics and Communication Engineering from Madurai Kamaraj University, Madurai and ME degree in Applied Electronics from Govt College of Technology, Coimbatore in 1990 and 1995 respectively.

From 1996–1999 he was with the Dept of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi as a Research Scholar and submitted the thesis.

He joined the Dept of Electronics and Communication Engineering, Mohamed Sathak Engineering College in 1995, where he is now promoted to an Assistant Professor.

He has published a good number of publications in Journal and Conferences of International repute.

His main research interests are concerned with modeling and characterisation of low-noise photodetector and photoreceivers.