Modelling of Strained Silicon-Germanium Material Parameters for Device Simulation

Abstract

Analytical models have been developed for strained Silicon-Germanium (SiGe) material parameters based on computed and experimental data. These parameters include: energy bandgap, conduction and valence band edge offsets, electron affinity, effective mass for electrons and holes, dielectric constant, electron and hole mobilities and their dependence on composition, doping density, electric field, and temperature, saturation velocity, minority carrier lifetime and recombination mechanisms including Auger and Shockley-Read-Hall, and coefficients for the impact ionization. The models developed may be used in predictive device simulation.

Indexing terms:

• Strained layers
• Bandgap
• Conduction and valence band discontinuities
• Silicon-germanium

Additional information

Notes on contributors

B Senapati

Biswanath Senapati received the PhD degree from Indian Institute of Technology (IIT), Kharagpur, India in 2001. In 1995 and 1997, he received the BSc degree and MSc degree from University of Calcutta, India respectively. Presently, he is a senior Engineer at austriamicrosystems AG, Austria. From 1998–2000, he worked as a project Assistant at Microelectronics Centre at IIT - Kharagpur, India. He was a Scientist at Innovations for High Performence Microelectronics (IHP), Germany (2001–2005). His technical interests and expertise are in the field of modelling and characterization of active and passive devices fabricated in SiGe/SiGe:C BiCMOS process for RF applications. He is the author and co-author of more than 30 scientific papers and has contributed to numerous conference presentations.