A Review of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers

Abstract

A review is given of the present status of Si/SiGe quantum cascade emitters operating in the terahertz part of the frequency spectrum and the issues regarding making a quantum cascade laser using such technology. Potential applications will be discussed before the major issues in obtaining a laser are reviewed. Waveguides properties will be clarified before cascade heterostructure regions with sufficient gain to overcome waveguide losses are discussed. Finally the future outlook and potential for lasing will be debated.

Indexing terms:

• Si
• SiGe
• Quantum cascade laser
• Waveguides
• Gain region

Additional information

Notes on contributors

D J Paul

Douglas J Paul was born in Greenock, UK in 1969. He received the BA and MA degrees in Physics and theoretical physics in 1990 and 1994, respectively and the PhD Degree, all from University of Cambridge, Cambridge, UK. Since 1994 he has been with the semiconductor Physics group in the Cavendish Laboratory at the University of Cambridge. His current research interests include the physics of short-channel CMOS devices, heterostructure and strained-Si CMOS, SiGe MODFETs. SiGe resonant tunneling diodes and quantum devices. Si/SiGe quantum cascade lasers, terahertz technology and quantum information processing.