A 1.6/1.8/2.1/2.4-GHz Multiband CMOS Low Noise Amplifier

Abstract

This paper describes an inductively source degenerated multiband low noise amplifier (LNA) designed in a standard CMOS 0.18 μm TSMC process. The multiband LNA can be tuned to 1.6-GHz, 1.8 GHz, 2.1 GHz and 2.4 GHz with the help of switches. The narrowband gain and impedance matching are obtained at the required frequency bands by appropriately switching the transconductance, input and output capacitances. The switches are realized using metal-oxide-semiconductor (MOS) transistors. The designed LNA exhibits a gain of 16.2dB, 16dB, 15.5dB and 15.5dB and a noise figure of 3.3dB, 3.5dB and 3.2dB at 1.6, 1.8, 2.1 and 2.4 GHz respectively. The LNA design is carried out using Mentor Graphics Eldo software.

Indexing terms:

• Low-noise amplifier (LNA)
• Impedance matching
• Inductively source degenerated LNA
• Multiband LNA
• Noise figure
• Gain

Additional information

Notes on contributors

Deepak Balemarthy

Deepak Balemarthy received the BE degree in Electronics and Communication Engineering from SRKR Engineering college, Bhimavaram, India in 2005. He is currently pursuing MTech in VLSI Design at Indian Institute of Technology Guwahati, India. His research interests are RF design and VLSI system design.

Roy Paily

Roy P Paily received the BTech degree in Electronics and Communication Engineering from College of Engineering, Trivandrum, India in 1990. He obtained the MTech and PhD from Indian Institute of Technology, Kanpur and Indian Institute of Technology, Madras in 1996 and 2004 respectively, in the area of Semiconductor Devices. Presently he is working as an Associate Professor in the Department of Electronics and Communication Engineering, Indian Institute of Technology, Guwahati since 2004. His current research interests are VLSI, MEMS and Devices.