GaAs HEMT Modeling and its Application to Active Frequency Multipliers

Abstract

In this article, improved nonlinear modeling technique for microwave PHEMT is described. The accurate small-and large-signal models of HEMT, MESFET devices are used for robust designs and fabrication development. The implementation of model is done by parameter extraction as well as using Agilent’s ADS. The modeling procedure is used to extract the model of PHEMT EC2612 supplied by United Monolithic Semiconductor Inc. This model is used to design single-stage 10/20 GHz wideband frequency doubler with a maximum conversion gain of 3 dB. The doubler has 40% bandwidth over the input frequency range of 8–12 GHz. A band reject at fundamental frequency filter has been designed at output stage of doubler instead of conventional λ/2 open circuit reflector at second harmonic frequency, which is responsible for broadband operation of doubler.

Keywords:

• Advanced curtice model
• Band reject filter
• Nonlinear modeling
• Wideband frequency doubler

Additional information

Notes on contributors

Hansraj Bhamra

Hansraj Bhamra received the B.Tech degree in 2004 from B.I.T. Durg, and M.Tech degree from I.I.T.Delhi, India in 2006. From 2006 – 2010, he worked on Analog IC development at Conexant Systems. Presently, he is pursuing Ph.D. at Purdue University, USA. E-mail: [email protected]

Ananjan Basu

Ananjan Basu was born August 12, 1969. He received the B.Tech degree in Electrical Engineering and M.Tech degree in Communication and Radar Engineering from the Indian Institute of Technology Delhi (I.I.T. Delhi), in 1991 and 1993, respectively, and the Ph.D. degree in electrical engineering from University of California at Los Angeles (UCLA), in 1998. He has been with the Centre for Applied Research in Electronics, I.I.T.Delhi, as an Assistant Professor (2000–2005) and Associate Professor (since 2005). His specialization is in microwave and millimeter-wave component design and characterization. He is the present Vice-chairman of the IEEE MTT-S Chapter under Delhi section. E-mail: [email protected]

Shiban K. Koul

Shiban K. Koul (S’81-M’83-SM’91) received the B.E. degree in Electrical Engineering from the Regional Engineering College, Srinagar, India, in 1977, and the M.Tech, and Ph.D. degrees in Microwave Engineering from the Indian Institute of Technology Delhi, India, in 1979 and 1983, respectively. He is currently a Professor with the Centre for Applied Research in Electronics, Indian Institute of Technology Delhi (I.I.T. Delhi), New Delhi, India. He is recipient of several awards: Indian National Science Academy (INSA) Young Scientist Award (1986); International Union of Radio Science (URSI) Young Scientist Award (1987); the top Invention Award (1991) of the National Research Development Council, VASVIK Award (1994), Ram Lal Wadhwa Gold Medal (1995) and DRDO Academy Excellence award (1998). His current research interests include microwave and millimeter wave circuit design, device modeling, micromachined active and passive component design and fabrication and Radio Frequency MEMS. He is Fellow of IEEE and is member of the IEEE MTT-S AdCom. He is the present Chairman of the IEEE MTT-S Chapter under Delhi Section. E-mail: [email protected]

Mahesh P. Abegaonkar

Mahesh P. Abegaonkar completed Ph.D. in Physics from Department of Physics, University of Pune, India in 2002. He has worked with Kyungpook National University, Daegu, South Korea as a Post-Doctoral Researcher and Assistant Professor during 2002–2004. He joined Centre for Applied Research in Electronics, IIT Delhi as an Assistant Professor in Feb. 2005. His research interests include multiband, wideband, reconfigurable and UWB antennas and filters. He is recipient of the Indian National Academy of Engineering’s Young Engineer Award 2008. He is the present Secretary and Treasurer of IEEE MTT-S Chapter under Delhi section. E-mail: [email protected]