A Four-step Iterative Design Optimization Technique for DLHL IMPATTs

ABSTRACT

A proposed four-step iterative optimization technique has been used to design a double low-high-low (DLHL) impact avalanche transit time (IMPATT) diode based on Si for 60 GHz operation. Initially the position of the charge bumps in both n- and p-epitaxial layers followed by the widths of those and the ratio of high to low doping concentrations have been varied to obtain the maximum large-signal DC to radio frequency (RF) conversion efficiency from the device. Finally the bias current density is varied within a specified range to obtain the optimum value of it for which the DC to RF conversion efficiency of the device is maximum. The above-mentioned four optimization steps have been repeated until the method converges to provide a stable optimized DC to RF conversion efficiency. A large-signal simulation technique based on non-sinusoidal voltage excitation model developed by the authors is used for this purpose. The large-signal properties of the optimized DLHL Si IMPATT have been simulated and those are compared with the experimental results reported earlier. The said comparison shows that the optimized DLHL diode is capable of delivering significantly higher RF power output with greater DC to RF conversion efficiency at 60 GHz as compared to its un-optimized counterpart.

Keywords:

• Design optimization
• Double low-high-low IMPATT
• Large-signal simulation
• Millimetre-wave

ACKNOWLEDGEMENTS

The senior most author, Professor (Dr) J. P. Banerjee (same as J. P. Bandyopadhyay) is grateful to the University Grants Commission, India, for supporting the research through the award of an Emeritus Fellowship in the Institute of Radio Physics and Electronics, University of Calcutta.

Additional information

Notes on contributors

Suranjana Banerjee

Suranjana Banerjee was born in 1980. She received M. Tech. degree from the Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India. She has been carrying out research work in the area of both homo-junction and hetero-junction ATT devices under CW and pulsed operations at millimetre-wave and terahertz frequency bands.

E-mail: [email protected]

Aritra Acharyya

Aritra Acharyya was born in 1986. He received M. Tech. degree from the Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India, in the year 2010. He is currently pursuing PhD work in the field of millimetre-wave and terahertz semiconductor devices and their optical control.

E-mail: [email protected]

Monojit Mitra

Monijit Mitra is the associate professor and head of Electronics & Tele Communications Department of Bengal Engineering and Science University, Shibpur, WB, India. His research interests are fabrication of microwave devices like IMPATT, its characterization, and system development.

E-mail: [email protected]

J. P. Banerjee

J. P. Banerjee (same as J. P. Bandyopadhyay) was born in 1947. He received the graduation and master degrees in physics and PhD degree in radio physics and electronics, all from the University of Calcutta. He was the reader in the Department of Electronic Science, C.U. from 1989 to 1998 and then full professor in the Institute of Radio Physics and Electronics, C.U., from 1998 to 2012. He is presently an emeritus professor in the Institute of Radio Physics and Electronics, C.U., India. He is the principal co-author of more than 200 research papers in international journals in the fields of semiconductor science and technology, microwave, millimetre-wave, and photonic devices.

E-mail: [email protected]