A Single Clock Charge Pump with High Conversion Ratio in 0.18 µm Process

ABSTRACT

This paper proposes a single clock charge pump with high-voltage conversion ratio for low-voltage applications. To increase the clock voltage level, a voltage doubler circuit has been used in the charge pump circuit. In each stage of this voltage doubler circuit, two out of phase clock signals are produced, meanwhile there is a charge transfer switch in every single stage that it's input is dynamically controlled by an inverter that turns the switch on and off completely. The four-stage charge pump is simulated by using Hspice software under 0.18 µm process with 1.8 V supply voltage and clock voltage. The output voltage and the conversion ratio of the charge pump are 14.71 V and 74.3%, respectively.

KEYWORDS:

• Charge Pump
• Charge Transfer Switch
• Conversion Ratio
• Single Clock
• Voltage Doubler

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the authors.

Additional information

Notes on contributors

N. Sohrabi

N. Sohrabi. He was born in Isfahan, Iran in 1985. He received BSc degree in electrical engineering in 2008. He has been working toward his MSc degree in electrical engineering since 2011 in Najafabad Branch, Islamic Azad University, Isfahan, Iran. His research interests include design of CMOS low-voltage DC–DC converter.

E-mail: [email protected]

M. Dolatshahi

M. Dolatshahi. He was born in Isfahan, Iran in 1980. He received his BSc and MSc degrees in electrical engineering in 2003 and 2006, respectively. He received his PhD degree in electrical engineering in 2011 from Science and Research Branch, Islamic Azad University, Tehran, Iran. He has been with the Department of Electrical Engineering of Najafabad Branch, Islamic Azad University, since 2006 where he is currently an assistant professor. His research interests include VLSI and CMOS low-voltage, low-power analog and mixed-signal integrated circuit design and optimization, as well as CMOS optical communications circuit design. M. Dolatshahi is the corresponding author.

E-mail: [email protected]

E. Borzabadi

E. Borzabadi. He was born in Iran, in 1941. He received his BSc and MSc degrees in physics in 1964 and 1967, respectively, from Tehran University, Tehran, Iran. He received his PhD degree in electrical engineering in 1979 from Southampton University, Southampton, England. He is currently an associate professor in Department of Electrical Engineering of Najafabad Branch, Islamic Azad University, Iran. His research interests are microwave, electronics, and optoelectronics.

E-mail: [email protected]