Influence of Carrier–Carrier Interactions on the Noise Performance of Millimeter-Wave IMPATTs

ABSTRACT

The influence of inter-carrier scattering phenomena on the noise performance of double-drift region (DDR) impact avalanche transit time diodes has been investigated. Three optimized Si DDR diode structures operating at 94, 140 and 220 GHz have been taken into account for this study. A newly reported analytical model of the ionization rates has been incorporated in the simulation in order to consider the effect of inter-carrier scattering inside the active region of the diodes and the noise performance of those have been evaluated by calculating the noise spectral density and noise measure around respective operating frequency bands. Results show that the noise performances of those are drastically worsened due to the aforementioned effect. The said deterioration has been found to be monotonically increasing in nature with the working frequency.

KEYWORDS:

• Avalanche noise
• Carrier–carrier interaction
• Noise measure
• Noise spectral density

ACKNOWLEDGEMENTS

All the authors wish to thank Cooch Behar Government Engineering College, WB, India, for providing excellent research facilities for carrying out the present work.

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the authors.

Additional information

Funding

Dr. Arindam Biswas wishes to thank Science and Engineering Research Board (SERB), India, for providing financial support for carrying out this research work through Early Career Research (ECR) Award scheme [grant number ECR/2017/000024/ES].

Notes on contributors

Prasit Kumar Bandyopadhyay

Prasit Kumar Bandyopadhyay is presently carrying out his doctoral research at National Institute of Technology, Durgapur, WB, India. His research interests are high frequency semiconductor devices.

E-mail: [email protected]

Arindam Biswas

Arindam Biswas received BTech and MTech degrees from Dumkal Institute of Engineering and Technology, WB, India, and Institute of Radio Physics and Electronics, University of Calcutta, in the years 2007 and 2010, respectively. Finally, he obtained PhD degree from National Institute of Technology, Durgapur, WB, India, in the year 2013. His research interests are non-linear optics and high frequency semiconductor devices.

E-mail: [email protected]

A. K. Bhattacharjee

A K Bhattacharjee is currently working as a professor of ECE Department in National Institute of Technology, Durgapur, WB, India. His research interests are antenna and high frequency semiconductor devices.

E-mail: [email protected]

Aritra Acharyya

Aritra Acharyya was born in 1986. He received BE and MTech degrees from IIEST, Shibpur, India, and Institute of Radio Physics and Electronics, University of Calcutta, India, in the years 2007 and 2010, respectively. Finally, he obtained PhD degree from Institute of Radio Physics and Electronics, University of Calcutta, in the year 2016. He is currently working as an assistant professor of Electronics and Communication Engineering Department at Cooch Behar Government Engineering College, West Bengal. His research interests are high frequency semiconductor devices. He has already published more than 115 research papers in peer reviewed journals and conference proceedings.