Numerical Modelling of Interconnect Electromigration Under Non-DC Stressing Conditions

Zhenyu WuKey Laboratory of Ministry of Education for Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an710071, People’s Republic of ChinaCorrespondence[email protected]
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Chao LiKey Laboratory of Ministry of Education for Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an710071, People’s Republic of ChinaView further author information

Zebo ZhaoKey Laboratory of Ministry of Education for Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an710071, People’s Republic of ChinaView further author information

Yintang YangKey Laboratory of Ministry of Education for Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an710071, People’s Republic of ChinaView further author information

Abstract

A numerical model of the equivalent time conversion to DC stressing for electromigration failures under various current waveforms is proposed based on the vacancy diffusion and damage healing theory. The Joule heating effect and the intrinsic stress-induced voiding are included in the calculation of interconnect reliability. The simulation results show that the cumulative lifetimes are strongly affected by current frequency and vacancy lifetime and a frequency shift to the right occurs for small vacancy lifetimes under AC stressing. For pulsed-DC stressing, the temperature rise dependent on the current frequency dominates the interconnect reliability. The average temperature rise due to Joule heating is reduced by two times when the frequency is larger than approximately the reciprocal of the thermal time of interconnect structures.

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Funding

The authors would like to acknowledge funding supports provided by the National Key Basic Research Program of China [grant number 2015CB351906].

Notes on contributors

Zhenyu Wu

Zhenyu Wu obtained his MS and PhD degrees from Xidian University in 2002 and 2005, respectively, all in microelectronics and solid state electronics. Currently, he is an Associate Professor of School of Microelectronics at Xidian University. His major research interest is microelectronics reliability. He is the author of more than 20 research papers in the related fields.

Chao Li

Chao Li obtained his bachelor's degree in School of Physics and Optoelectronic Engineering from Xidian University in 2013. Currently he is pursuing his Master's degree in School of Microelectronics at Xidian University. His major research interests include interconnection reliability and microelectronic devices reliability.Email: [email protected]

Zebo Zhao

Zebo Zhao obtained his bachelor's degree in School of Microelectronics from Xidian University in 2014, Currently he is a master degree candidate in School of Microelectronics at Xidian University. His major research interests include flexible and stretchable interconnection, and microelectronics reliability.Email: [email protected]

Yintang Yang

Yintang Yang obtained his MS degree in School of Microelectronics from Xidian University in 1984. He obtained his PhD degree from Xi’an Jiaotong University in electronic science and technology. He has been a professor of School of Microelectronics at Xidian University since 1997. His research interests include semiconductor materials, devices, and systems. He is the author of more than 180 scientific papers in the related fields.Email: [email protected]

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