Investigation of RF and DC Performance of E-Mode In_0.80Ga_0.20As/InAs/In_0.80Ga_0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications

ABSTRACT

In this paper, we systematically investigated the DC and RF behaviour of the novel Enhancement-Mode (E-Mode) Double-Gate High Electron Mobility Transistors (DGHEMTs) using Sentaurus-TCAD software. The scalability of the novel DGHEMT is also studied by analysing the short channel effects. The attractive features of the proposed DGHEMT are intrinsic In_0.80Ga_0.20As/InAs/In_0.80Ga_0.20As channel, dual silicon delta doping sheets and platinum (Pt) buried gate technology. The proposed DGHEMT with L_g = 20 nm exhibits a g_{m_max} of 3970 mS/mm and I_{DS_max} of 1650 mA/mm at V_GS = 0.6 V and V_DS = 0.8 V. The proposed DGHEMT exhibits a threshold voltage of 20 mV which indicates its E-Mode behaviour. The sub-threshold swing (SS) and DIBL values obtained for L_g = 20 nm DGHEMT at V_DS = 0.5 V are 74 mV/dec and 78 mV/V respectively. The L_g = 20 nm proposed E-Mode DGHEMT also exhibit a f_T and f_max of 826 and 1615 GHz respectively at V_DS= 0.6 V. The computed logic gate delay for the L_g = 20 nm DGHEMT is 31.25 fS with an electron velocity under the gate of 6.4 × 10⁷ cm/S. This excellent RF and DC behaviour of the proposed DGHEMT makes them an excellent choice for future sub-millimetre wave and THz frequency applications.

KEYWORDS:

• Drain induced barrier lowering (DIBL)
• gate delay
• InAs
• quantum well (QW)
• short channel effects (SCEs)
• sub-threshold swing (SS)

ORCID

J. Ajayan http://orcid.org/0000-0002-2398-3690

P. Mohankumar http://orcid.org/0000-0002-4107-8969

P. Prajoon http://orcid.org/0000-0003-0000-3255

J. Charles Pravin http://orcid.org/0000-0002-9009-6274

D. Nirmal http://orcid.org/0000-0002-9751-2816

Additional information

Notes on contributors

J. Ajayan

J. Ajayan received the B.Tech Degree in Electronics and Communication Engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in Electronics and Communication Engineering from Karunya University, Coimbatore, India, in 2017. He is a senior assistant professor in the department of Electronics and Communication Engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science). Email: [email protected]

T. Ravichandran

T. Ravichandran received the B.E Degree in Electronics and Communication Engineering from Bharathiyar University, Tamilnadu, India, in 1994 and the M.E. degree in Computer Science and Engineering from Madurai Kamaraj University, Tamilnadu, India, in 1997 and the Ph.D. degree from Periyar University, Tamilnadu, India, in 2007. He is a professor and dean in the department of Electronics and Communication Engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. Under his supervision, 30 research scholars completed their Ph.D. and he has received many awards including best faculty award from KSR College of technology. He is a reviewer of many international journals and also an editorial member of many reputed journals. Email: [email protected]

P. Mohankumar

P. Mohankumar received his B.E. degree in Electronics and Instrumentation engineering from Anna University, Chennai, India, in 2013 and the M.E. degree in Mechatronics Engineering from Kongu Engineering College, Erode, India, in 2015. Currently, he is working as an assistant professor in the Department of Mechatronics Engineering at SNS College of Technology, Coimbatore, India. His research interest includes VLSI Design, MEMS, Ergonomics and Sensors & Instrumentation. Email: [email protected]

P. Prajoon

P. Prajoon (S’15) received a graduate degree in Electronics and Communication Engineering from Institution of Engineers (India) 2007 and M.Tech degree in VLSI Design from Karunya University, Coimbatore, Tamilnadu, India, in 2014, where he is currently pursuing the Ph.D. degree in InGaN based Quantum well Optoelectronic Devices. His research interests include Microelectronics, Optoelectronics, Device fabrication and Modelling. He has many publications in refereed journal and conference publications. He is a student Member of IEEE and Associate Member of IEI. Email: [email protected]

J. Charles Pravin

J. Charles Pravin (S’15) received ME degree in Applied Electronics from Anna, University Chennai, India in 2011. He is currently pursuing the Ph.D. degree with the Department of Electronics and Communication Engineering, Karunya University Coimbatore. He has been an Assistant Professor with Park College of Technology under Anna University Chennai, India from 2011 to 2013. His research interest is Nano-Scale Device Modelling and Simulation, VLSI circuit design etc. He is a student member in IEEE EDS. Email: [email protected]

D. Nirmal

D. Nirmal (M’08–SM’15) is currently an Associate Professor in the School of Electrical Sciences, Karunya University, India. He received the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nanoelectronics, Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereed international journals and conferences. He is a Chair of IEEE ED Coimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year 2013. He has received the best high impact factor journal publication award and best researcher award from Karunya University in 2012 and 2014, respectively. He has delivered many lectures and invited to chair several conferences/workshops in the National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies. Email: [email protected]