Asymmetry Switching Behavior of the Binary Memristor

Abstract

The physical model of binary oxide memristor is developed using the Finite Element Method (FEM). Ion transport, through the device, is modeled according to the non-linear ionic transport phenomenon in nano-scale devices for high electric field. The main physical mechanisms incorporated in memristor operation are considered using the simulations obtained from the FEM model. Using this model, the asymmetry between set and reset switching times of memristor is discussed. Finally, the effects of temperature and device geometry on the switching behavior of memristor are investigated.

KEYWORDS:

• Memristor
• Finite element method
• Non-linear model
• Transient analysis
• Asymmetry
• Switching behavior

Additional information

Notes on contributors

Mohammad Saeed Feali

Mohammad Saeed Feali received the BSc degree in electrical engineering from Azad University, Kermanshah, Iran, in 2010, and the MSc degree in electronics engineering from Azad University, Tehran South, Tehran, Iran, in 2012 (both with Honours). He is currently working toward the PhD degree in electronics engineering at Razi University, Kermanshah, Iran. His research interests include memristors, neuromorphic, resistive random access memory (RRAM), full cells and microfluidics. Corresponding author. Email: [email protected]

Arash Ahmadi

Arash Ahmadi (M’04) received the BSc and MSc degrees in electronics engineering from Sharif University of Technology and Tarbiat Modares University, Tehran, Iran, in 1993 and 1997, respectively, and the PhD degree in electronics from the University of Southampton, UK, in 2008. He was with Razi University, Kermanshah, Iran, as a faculty member. From 2008 to 2010, he was a fellow researcher with the University of Southampton. He is currently an assistant professor in the Electrical Engineering Department, Razi University. His current research interests include hardware implementation of signal processing systems, high-level synthesis, bio-inspired computing and memristors. Email: [email protected]

Mohsen Hayati

Mohsen Hayati received the BE in electronics engineering from Nagarjuna University, India, in 1985, and the ME and PhD degrees in electronics engineering from Delhi University, India, in 1987 and 1992, respectively. Currently, he is a professor with the Electrical Engineering Department, Kermanshah Branch, Islamic Azad University and the Electrical Engineering Department of Razi University. He has published more than 195 papers in international, domestic journals, and conferences. His current research interests include microwave and millimeter wave devices and circuits, application of computational intelligence, artificial neural networks, electronic circuit synthesis, modeling and simulations. Email: [email protected]