Visible Range Characterization of Au/Graphene-GaAs Schottky Junctions in MESFET

Abstract

We report the simulated visible range characteristics of gold (Au)/graphene-GaAs Schottky junctions in MESFET (Metal–Semiconductor Field Effect Transistor) under photovoltaic, forward bias, and reverse bias conditions. The devices exhibit high photoresponse in zero bias conditions, moderate response under applied reverse bias, and zero photoresponse in forward bias conditions. We discuss in detail the factors involved in the attained response and provide comparative analysis of the studied devices with our previously published work on ultraviolet (UV) characterization demonstrating moderate response under both zero bias and reverse bias, and z ero response under forward bias. We also perform comparison of our theoretical results with the literature showing enhanced or comparable performance. The simulation model is validated with the experimental results reported elsewhere as well as with the commercially available software (Visual TCAD) simulations. The GaAs MESFET Schottky junctions will serve good purpose in UV-visible applications.

KEYWORDS:

• MESFET
• Photovoltaic
• Reverse bias
• Schottky junction
• Ultraviolet
• Visible

Additional information

Notes on contributors

Jaya V. Gaitonde

J V Gaitonde, was born at Margao, Goa, India on 14th August 1986, received the BE degree in electronics and telecommunication in 2007 and the ME degree in electronic communication and instrumentation in 2011 from Goa Engineering College; served as a visiting lecturer and research assistant in Electronics and Telecommunication Department at Goa Engineering college. He has 32 publications in national and international conferences, and international journals. His area of research interest is optoelectronics and is currently pursuing PhD in Electronics and Telecommunication Department, Goa College of Engineering. Shri Gaitonde is a member of IEEE and IETE. Corresponding author. Email: [email protected]

R. B. Lohani

R B Lohani, was born at Bhusaval, Maharashtra, India on 7th June 1966, BE, ME, PhD (electronic engineering), is currently professor in Electronics and Telecommunication Department, Goa College of Engineering, Farmagudi, Ponda, Goa, India; served as head of Department (Electronics and Telecommunication Department), Principal (Goa College of Engineering), and dean, Faculty of Engineering, Goa University. He has more than 78 paper publications in journal and conference proceedings at national and international level, and has applied for 3 Indian patents. His present area of interest is high speed and optoelectronic devices, optical communication, and electronic instrumentation. Dr Lohani is a fellow of IETE, life member of ISTE, and member of “Computer Society of India”. Email: [email protected]