DC Characterization and High-Frequency Performance Analysis of a GaN/AlGaN HET on a β-Ga₂O₃ Substrate

Abstract

In this paper, an AlGaN/GaN heterojunction transistor on a wide band gap material substrate is designed and simulated with Silvaco TCAD software. The substrate material used in this work is β gallium oxide(β-Ga₂O₃). The cutoff frequency and maximum oscillation frequency of the device extracted are 82 and 360 GHz, respectively, which are better compared to those of recently reported works. These values of f_T and f_max prove that the proposed high electron mobility transistor is suitable for radio frequency applications.

KEYWORDS:

• f_T
• f_max
• β-Ga₂O₃
• HEMT
• Silvaco TCAD

ACKNOWLEDGEMENT

Authors would like to convey their sincere thanks to Department of Avionics, Indian Institute for Space Science & Technology, Trivandrum, for providing VLSI and Micro systems Laboratory to complete the work.

Additional information

Notes on contributors

Anju S.

S Anju received her bachelor’s degree, BTech (Electronics and Comm. Engineering) from Mahatma Gandhi University, Kottayam, India, in 2009 and MTech (VLSI & Embedded Systems) from Cochin University of Science & Technology, Kerala, India, in 2011. She has over nine years of teaching experience. She is currently with the St Thomas Institute for Science & Technology, Trivandrum, Kerala, India, as assistant professor in Electronics Engineering Department. Her areas of interest are VLSI and device modelling.

Biji Jacob

Biji Jacob received the BTech degree in electronics and communication from the College of Engineering Trivandrum, India, in 1988, the MTech degree in electronics design and technology from the Indian Institute of Science, Bangalore, India, in 1998, and the PhD degree from the University of Kerala, Thiruvananthapuram, India, in 2013. From 1988 to 1991, he was with the National Airports Authority of India. Since 1991, he has been a member of the Faculty of Electronics and Communication Engineering, Engineering Colleges, Kerala State Directorate of Technical Education, Thiruvananthapuram, India and he is currently Dean (Academics), of Government Engineering College, Wayanad, India. His current research interests include motor drives, signal processing and VLSI design. Email: [email protected]

Geenu Paul

Geenu Paul received her bachelor’s degree, BTech (Electronics and Comm. Engineering) from University of Kerala, Kerala, India in 1995, ME (Applied Electronics) from Anna University, Tamilnadu in 2008 and PhD (Electronics and Communication Engineering) from the University of Kerala, India. She has over 20 years of teaching experience and 2 years of Industrial experience. She is currently with the St Thomas Institute for Science & Technology, Trivandrum, Kerala, India, as head and associate professor in Electronics Engineering Department. She has authored eight international journals and conference papers. Her areas of interests are image processing, artificial neural networking, biomedical engineering and VLSI design. Email: [email protected]

V. Suresh Babu

V Suresh Babu received BTech degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 1989, MTech degree in integrated electronic devices and circuits from IIT Madras in 1996 and PhD degree in electronics and communication in 2013 from Kerala University. From 1990 to 1991, he was with the Kerala State Electronics Development Corporation Ltd., Trivandrum, India. Since 1991, he has been a member of the faculty of the Department of Electronics and Communication Engineering, in Government Engineering Colleges in Kerala. Presently, he is professor in electronics and communication Engineering, Government Engineering College Wayanad, Kerala, India. His areas of interest are solar photovoltaics and nano-electronic devices. Email: [email protected]