Numerical Study of Two HEMTs, AlGaN and InGaN,  by Sharing the Drain Area for Power Application

Abstract

In this paper we simulate a high electron mobility transistor structure of two HEMTs, by sharing the drain, with the using Silvaco-Tcad software. Our two HEMTs AlGaN and InGaN, on H4-SiC substrate and 50 nm gates length shows a very good scalability in different applications. It demonstrates a drain current of about 991.4 mA, a maximum transconductance of 859.1 ms/mm at Vds = 3V, a cut-off frequency of 115.6 GHz, a maximum oscillation frequency of 168.8 GHz, a drain-induced barrier lowering (DIBL) = 40 mV/V, a sub-threshold swing of 130 mV/dec, an On/Off current ratio higher than 6.82 × 10⁷ and a leakage gate current of 2 × 10⁻⁸ A.

KEYWORDS:

• AlGaN/GaN
• Gates length
• HEMT
• H4-SiC substrate
• InGaN
• Silvaco-TCAD

Additional information

Notes on contributors

Bechlaghem Fatima Zahra

Bechlaghem Fatima Zahra received her PhD degree in physics from the University of Tlemcen, the Faculty of Science Department Physics in Tlemcen (Algeria), in 2018. She is a member at Research Unit of Materials and Renewable Energies, in Tlemcen (Algeria). Her research interests are: semiconductor devices, HEMT, algorithm genetics and Monte-Carlo techniques.

Hamdoune Abedelkader

Hamdoune Abedelkader obtained his degree in electronic engineering in 1981 in Oran (Algeria), and his doctorate in 2006, in microelectronics, in Tlemcen (Algeria). He had been a teacher since 1981 at the Faculty of Technology, researcher in Research Unit of Materials and Renewable Energies,University of Abou-BekrBelkaid. He has been a professor in microelectronics,since 2013. His research interest includes III-N materials, III-N. E-mail: [email protected]