236
Views
0
CrossRef citations to date
0
Altmetric
Articles

Universal Filter Design Using 45 nm FinFET Technology-Based Floating Current Source

ORCID Icon & ORCID Icon
 

ABSTRACT

Fin type Field Effect Transistor (FinFET) technology is a promising technology for single-digit nanometric dimensions. FinFETs are used to increase the performance by reducing the power consumption as the two gate voltages are controlled dependent and/or independently. This work explores the design of a Floating Current Source (FCS) using Double Gate (DG) FinFET and its application of a universal filter. The designed FinFET based FCS operates at 0.15 V power supply, the power consumption of the circuit is 51nW and bandwidth is approximately 100 MHz. The proposed FCS based filter circuit is simulated in LTspice with the FinFET 45 nm PTM-MG model. The filter topology behavior has been tested with an experimental study using the LM13700 integrated circuit and the experimental results are demonstrated. The proposed FinFET based circuit and its application can be used for the design of systems that require low power consumption and low chip area.

Additional information

Notes on contributors

Nuray Saglam Bedir

Nuray Sağlam Bedir received her BSc and MSc degrees from Istanbul University in electrical and electronic engineering in 2014 and 2018, respectively. She is currently a PhD student at the Electrical and Electronics Engineering Department of Istanbul University-Cerrahpasa and a teaching assistant at the Istanbul University Cerrahpasa, Vocational School of Technical Sciences. Her current research interests include analog circuits, active filters, FinFET, and multi-gate FET based circuits.

Fırat Kacar

Fırat Kaçar received his BSc, MSc and PhD degrees from Istanbul University, all in electrical and electronics engineering in 1998, 2001, and 2005, respectively. He is currently a professor at the Electrical and Electronics Engineering Department of Istanbul University. His current research interests include analog circuits, active filters, synthetic inductors, CMOS based circuits electronic device modeling, and hot-carrier effect on MOS transistor. He is the author/co-author of about 100 papers published in scientific journals and conference proceedings. Email: [email protected]

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.