Plasmonic Grating-Based Refractive Index Sensor with High Sensitivity

Abstract

This paper proposes a plasmonic grating-based Refractive index sensor. A defect region is set up in the plasmonic grating. A special transmission mode near $\lambda =1550\text{ nm}$ is excited in the stop band of the plasmonic grating. When a nano-metallic slit is introduced in the defect region, a special resonance phenomena, Fano resonance, emerges. The tuning of Fano resonance can be observed by engineering the structural parameters of the device. The sensing principle is analyzed through the numerical investigation FDTD (Finite difference in time-domain) method. This sensor’s performance is quantified using sensitivity. The proposed sensor reports high sensitivity (S = 1250 nm/RIU) with an ultra-narrow line width of 10 nm. The study opens a means for the designing of on-chip optical sensors that will be viable in bio-sensing and chemical sensing.

KEYWORDS:

• Fano resonance
• Line-width
• Plasmonic grating
• Sensitivity

Additional information

Notes on contributors

Hardik Mathuriya

Hardik Mathuriya received his BTech degree from Jai Narayan Vyas University, Jodhpur in 2016 and MTech degree in the Department of Electronic and Communication Engineering, from MNIT, Jaipur, Rajasthan, India in 2019. His research interest has been in the area of photonic crystal and plasmonic circuits. Email: [email protected]

Rukhsar Zafar

Rukhsar Zafar received her BE degree in electronics and communication engineering from the University of Rajasthan, MTech and PhD degrees in electronics and communication engineering from Malaviya National Institute of Technology (MNIT) Jaipur. In early 2008, she joined the academic staff of Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur, where she is associate professor with the Department of EC Engineering. Dr Zafar has published and reported over 30 research papers/review articles in peer-reviewed international journals/conferences. Her current research interest includes micro and nano-structured photonic devices for integrated photonics, slow light and plasmonic devices.

Ghanshyam Singh

Ghanshyam Singh, a recipient of Distinguished Lecturer award from IEEE Photonics Society for 2017–2018, received BTech degree in electronics and communication engineering from NIT Silchar (then REC Silchar), MTech and PhD degrees in electronics and communication engineering from Malaviya National Institute of Technology (MNIT) Jaipur. In early 1999, he joined the academic staff of MNIT Jaipur, where he is associate professor with the Department of EC Engineering. He has worked as visiting research scholar/visiting professor in the area of photonic switching and networks for various periods at the Department of Physics, Herriot Watt University, Edinburgh, UK (March 2009), the Institute of Photonics, University of Eastern Finland, Joensuu, Finland (January–June 2010) under the CIMO Fellowship (Govt. of Finland) and Department of EEE, Keio University, Hiyoshi Campus, Yokohama, Japan (October 2013). Dr Singh has extensive teaching, research and sponsored R&D experience (for various funding agencies from India and abroad) on many aspects of optical communication and photonics engineering and has published and reported over 100 research papers/review articles in peer-reviewed international journals/conferences. He has delivered expert talks on related research topics during various events held in India and abroad (including the Germany, Finland, Japan, Ukraine, Belarus, China, Poland, Italy etc.). Dr Singh is a Senior Member of OSA, IEEE and Fellow of OSI and IETE. He is also a Life Member of other professional societies including the SPIE, ISTE, IE (India), etc. Email: [email protected]