Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications

ABSTRACT

In this work, the impact of high-K and gate-to-drain spacing (L_gd) in InAs-based double-gate metal oxide semiconductor high-electron-mobility transistor (DG-MOS-HEMT) is analyzed for low-loss and high-frequency applications using 2D Sentaurus TCAD simulation. In this device, HfO₂ is utilized as the dielectric material and that offers a reduced leakage current. The device with small gate-to-drain spacing (L_gd) gives an exquisite device operation in enhancement mode (E-mode) operation with a positive threshold voltage (V_T) of 0.1223 V, the high drain current (I_ds,sat) of 1.38 mA/µm, transconductance (g_m) of 1.59 ms/µm, and sub-threshold slope (SS) of 75 mV/dec is achieved. These superior properties in this device show a high cut-off frequency (f_T) of 547 GHz and the maximum oscillation frequency of (f_max) of 740 GHz. The numerical device simulation results show that DG-MOS-HEMT with HfO₂ as dielectric offers a remarkable control of leakage current and makes it suitable for low-power, low-noise, and high-frequency applications.

KEYWORDS:

• DG-MOS-HEMT
• 2DEG
• Heterostructure
• HfO₂
• InAs channel
• Quantum well

Additional information

Notes on contributors

S. Baskaran

S Baskaran was born in Kalavai, Tamilnadu, India. He received the BE degree in electronics and communication engineering and the ME degree in applied electronics from Anna University. He received the PhD degree in information and communication from Anna University, Tamilnadu. He has published more than 10 research papers in international conferences and journals. Currently, he is working as a professor in the Department of Electronics and Communication Engineering at SKP Engineering College, Tiruvannamalai. His research interests include nanoelectronics, low-power VLSI design, and embedded system.

R. Saravana Kumar

R Saravana Kumar was born in Thirvannamalai, Tamilnadu, India. He received the BE degree in electronics and communication engineering and the ME degree in applied electronics from Anna University. He received the PhD degree in information and communication from Anna University, Tamilnadu. He has published more than 18 research papers in international conferences and journals. Currently, he is working as an assistant professor – Level III in the Department of Electronics and Communication Engineering at the Bannari Amman Institute of Technology, Sathyamangalam, Tamilnadu. His research interests include nanoelectronics, low-power VLSI design, and embedded system. Email: [email protected].

V. Saminathan

V Saminathan completed his BE in ECE in the year 2003 at the Government College of Technology, Coimbatore, ME in applied electronics at Maharaja Engineering College, Avinashi in 2008 and PhD in ICE at Anna University in the year 2018, presently working as an associate professor in the Department of Electronics and Communication Engineering at the Karpagam College of Engineering, Coimbatore. Email: [email protected].

R. Poornachandran

R Poornachandran was born in Tiruvannamalai, India in 1993. He received his BE degree in electronics and communication engineering from Anna University in 2014 and ME degree in communication systems from the same University in 2016. He received his PhD in June’20 from Anna University under the supervision of N Mohankumar as a full-time research scholar. At present, he has published five papers in international conferences and journals. His research interest includes the modeling and simulation study of nano-scale transistors, HEMTs, optimization of devices for RF applications, and characterization of nanowire MOSFETs, emerging HEMT architectures for Terahertz applications. Email: [email protected]

N. Mohan Kumar

N Mohankumar was born in India in 1978. He received his BE degree from Bharathiyar University, Tamilnadu, India in 2000 and ME and PhD degrees from Jadavpur University, Kolkata in 2004 and 2010. He joined the Nano Device Simulation Laboratory in 2007 and worked as a senior research fellow under CSIR direct scheme till September 2009. Later, he joined SKP Engineering College as a professor to develop research activities in the field of VLSI and nano technologies. He is currently working as a professor in the Department of Electrical, Electronics & Communication Engineering, School of Technology, GITAM (Deemed to be University), Bengaluru, Karnataka. He is a Senior Member of IEEE and served as the secretary of IEEE, EDS Calcutta Chapter from 2007 to 2010. He served as the chairman of IEEE, EDS Madras Chapter from 2010 to 2017. He is currently the vice-chair of R10 SRC. His research interest includes the modeling and simulation study of nano-scale transistors, HEMTs, optimization of devices for RF applications, and characterization of nanowire MOSFETs, emerging HEMT architectures for terahertz applications. Email: [email protected].

V. Janakiraman

V Janakiraman received the BE degree in electronics and communication engineering from the University of Madras, the MTech degree in electronics and communication engineering from Pondicherry University, Pondicherry and the PhD degree from Anna University. He is currently working in the Department of Electronics Engineering at the Dhanalakshmi Srinivasan College of Engineering and Technology, Chennai. His research area includes signal processing techniques for wireless communication systems, with emphasis on synchronization algorithms in orthogonal frequency division multiplexing and design of VLSI circuits. Email: [email protected].