Ultra-Low Power 8-Transistor Modified Gate Diffusion Input Carbon Nano-Tube Field Effect Transistor Full Adder

Abstract

An ultra-low power 8-Transistor Modified Gate Diffusion Input (MGDI) Carbon Nano Tube Field Effect Transistor (CNTFET) Full Adder (FA) has been presented in this paper. The proposed 8-T MGDI CNTFET Full Adder outperforms other adders in terms of Power Consumption, Propagation Delay and the PDP at different levels of Power Supply and Temperatures. The power consumption of the proposed 10 nm CNTFET 8-T MGDI Full Adder at 27°C is 1.96 nW. The proposed CNTFET FA exhibits 60.32% improvement in Power Consumption when compared to the existing 10 nm FINFET 8-T MGDI Full Adder. The propagation Delay of the proposed FA is 42.16 ps and an improvement of 57.68% is noticed over the existing FA. The Power Delay Product of the proposed 10 nm CNTFET 8-T MGDI FA is 82.63 ×  10⁻²¹ Jules, whereas the PDP of the 10 nm FINFET 8-T MGDI FA is 492.07 × 10⁻²¹ Jules. The PDP of the proposed 10 nm CNTFET 8-T MGDI Full Adder exhibits 83.21% improvement when compared to the 10 nm FINFET 8-T MGDI FA.

KEYWORDS:

• CNTFET
• FINFET
• Full Adder
• MGDI
• Ultra-low power
• 8-Transistor Full Adder

Acknowledgement

The author PT is thankful to the officials of AKTU, Lucknow for their continuous support and motivation.

Additional information

Notes on contributors

Priyanka Tyagi

Priyanka Tyagi obtained her MTech degree from MDU, Rohtak in 2011 in VLSI Design. She has taught in various reputed institutions such as Manav Rachana University, Faridabad, Priyadarshini College of Computer Sciences, Gr Noida and ABESIT College of Engineering, Ghaziabad. Her research interest is in low power VLSI Circuits and nanoelectronics.

Sanjay Kumar Singh

Sanjay Singh obtained PhD from Uttarakhand Technical University, Dehradun in 2014 in low power VLSI design. He has taught in various reputed institutions. Currently, he is working in ABES Engineering College, Ghaziabad. He is working also as Editor in IJAEST and IJAEEE Journal and published various books based on microprocessor and electronics engineering. He has over 15 publications in international and national journals and conferences. Email: [email protected]

Piyush Dua

Piyush Dua obtained his PhD degree from Indian Institute of Technology, Roorkee, India in 2005. After finishing his doctorate, he served in various institutions. Presently, he is working at the University of Technology and Applied Sciences – Suhar, Oman. He has a teaching experience of about 12 years. He has worked as a post-doctoral scientist at Pohang University of Science and Technology (POSTECH), and has been awarded two projects as principal investigator. He has published 20+ papers in refereed journals of International repute journals including Journal of Biomedical Nanotechnology and many others. Email: [email protected], [email protected]