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Electronic Circuits, Devices, and Components

Improved Q-Factor 3D Double-Layered On-Chip Resistor with Shielded Ground Conductor

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Abstract

In this paper, a double-layered structure to form an N-Well meander-line structure by added shielding grounded conductor to improve the quality factor on-chip resistors in high frequency operation is presented. An additionally added shielding ground conductor is applied to the proposed structure to reduce the induced capacitance coupling. and substrate losses for further improvement of the Q factor were also presented. Sonnet EM simulation result validated that double-layered structure via the shielding ground conductor was effective to improve their quality factors by 37.8% from 1.209 to –0.752 and reducing capacitance coupling effect by 57.92% from 55.23fF to 23.24fF during operating frequency at 10 GHz compared with conventional N-Well meander-line resistors. A novel structure in the design of a double-layered on-chip resistor with a shielding grounded conductor showed that capacitance coupling of parasitic effect was reduced; therefore, a low Q factor in high-frequency operations was obtained.

ACKNOWLEDGMENT

The authors would like to thank the University of Malaya for Research Grant and the Sonnet Corporation for the EM simulation to support this work.

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Goon Weng Wong

Goon Weng Wong received his BEng (Hons) degree in electronic engineering from Multimedia University, Cyberjaya, Malaysia, in 2002, an MEng degree in electronic and telecommunication from the University Technology of Malaysia, Skudai, Malaysia, in 2008, and a PhD Eng degree from the University of Malaya in 2022. He is a member of the Institute of Engineers Malaysia (IEM), Board of Engineers Malaysia (BEM), and ASEAN Chartered Professional Engineer (ACPE). His research interests include RF microelectronic and wireless communication. Corresponding author. Email: [email protected]

Norhayati Soin

Norhayati Soin received a BEng (Hons) degree in electrical and electronic engineering from Liverpool University, UK in 1991, the MSc degree in microelectronic from Liverpool John Moores University in 1999, and PhD degree from Universiti Kebangsaan Malaysia in 2006. She is a professor in the Department of Electrical Engineering at the Faculty of Engineering, University of Malaya. Her research interests include microelectronics, RF micro-electromechnical systems, and BIOMEMS. E-mail: [email protected]

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