Abstract
Positive temperature coefficient resistance (PTCR) materials of Gd and Cr co-doped BaTiO3 ceramics were prepared by well known solid state reaction method. Temperature dependent electrical studies were performed in the temperature range from 300 K to 673 K. Curie temperature of the samples are around 345 K to 385 K. Resistivity was maximum at low temperature and decreases as the temperature increases confirming the semiconducting behavior and PTCR property of the synthesized nano-sized compounds. Thermoelectric properties demonstrated n-type semiconductor characteristics from room temperature to 673 K.
Acknowledgments
The authors (SM and RS) greatly acknowledge the University Grants Commission (UGC), New Delhi, for granting fellowship under RFSMS scheme No. F. 4–1/2006(BSR)/11–129/2009 (BSR). Author (NS) thanks to University Grants Commission (UGC), New Delhi, for awarding Project Fellowship under Major Research Project vide ref no. 37–177 / 2009 (SR).
Communicated by Dr. Deborah J. Taylor