RADIATION THERMOMETRY OF SILICON WAFERS IN A DIFFUSION FURNACE WITH ROD-TYPE AND PRISM-TYPE OPTICAL GUIDES

Tomoji Watanabe Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki, 300, Japan

Shigeki Hirasawa Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki, 300, Japan

Takuji Torii Katsuta Research Laboratory, Hitachi Koki Co., Ltd., 1060 Takeda, Katsuta, Ibaraki, 312, Japan

Tetsuya Takagaki Musashi Works, Hitachi Ltd., 5-20-1 Jousuihoncho, Kodaira, Tokyo, 187, Japan

Abstract

This article examines the accuracy of radiation thermometry in measuring the temperature of silicon wafers in a diffusion furnace. This technique uses optical guides to bring thermal radiation from the wafers to the outside of the furnace. The error due to veiling glare of a rod-type optical guide is 40°C and that of a prism-type is 0.5°C at steady state.

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RADIATION THERMOMETRY OF SILICON WAFERS IN A DIFFUSION FURNACE WITH ROD-TYPE AND PRISM-TYPE OPTICAL GUIDES

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RADIATION THERMOMETRY OF SILICON WAFERS IN A DIFFUSION FURNACE WITH ROD-TYPE AND PRISM-TYPE OPTICAL GUIDES

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