Theory of the electronic structure of Ga_1-yIn_yN_xAs_1−x and related alloys

Abstract

We present a quantitative k.P Hamiltonian which describes analytically the composition dependence of the energy gap, interband momentum matrix element, band edge effective masses and conduction band dispersion of GaN_XAs_1−x alloys for low N concentrations (x < ∼ 0.05). The model has been confirmed using an sp³s∗ tight-binding Hamiltonian whose results agree well both with experiment and with previous pseudopotential calculations. The model should be of wide use to guide the future development of this material system and its applications.

Key Words:

• Band structure
• GaInNAs
• k.P Hamiltonian