Nitrogen-induced band formation in GaN_xAs_1−x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance

P. J. Klar Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

P. M. A. Vicente GES, Université, Montpellier II, Case Courier 074, F-34095, Montpellier Cedex, 5, France

H. Grüning Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

W. Heimbrodt Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

J. Koch Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

F. Höhnsdorf Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

W. Stolz Department of Physics and Materials Science Centre, Philipps-University, 0-35032, Marburg, Germany

J. Camassel GES, Université, Montpellier II, Case Courier 074, F-34095, Montpellier Cedex, 5, France

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Abstract

GaN_xAs_1−x samples with × ranging from 0.043% to 2.8% were grown by MOVPE. Analysing low-temperature photoluminescence spectra taken under hydrostatic pressure and room temperature photomodulated reflectance spectra gives strong evidence that the transition from N acting as an isoelectronic impurity to forming N-induced bands takes place at a N-concentration of about 0.2%.

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Nitrogen-induced band formation in GaN_xAs_1−x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance

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Nitrogen-induced band formation in GaNxAs1−x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance

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Nitrogen-induced band formation in GaN_xAs_1−x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance