Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

M. Gryglas Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681, Warsaw, Poland

J. Przybytek Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681, Warsaw, Poland

M. Baj Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681, Warsaw, Poland

M. Henini Departrnent of Physics, University of Nottingham, University Park, Nottingham, NG7 ZRD, United Kingdom

L. S. Eaves Departrnent of Physics, University of Nottingham, University Park, Nottingham, NG7 ZRD, United Kingdom

Abstract

We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor & doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (σ-V) characteristics shift with a pressure rate of -lSmeV/kbar, which is expected for X-minima related electronic states.

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Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

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Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

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