Abstract
Modulation doped CdTe/Cd1−xMgxTe heterostructures grown on GaAs substrates were studied by means of magnetotransport measurements performed under hydrostatic pressure, as well as X-ray diffraction and cross-sectional transmission electron microscopy completed before and after pressure experiments. We have shown that hydrostatic pressure leads to the creation of dislocations in the CdTe/Cd1−xMgxTe structure in the vicinity of the interface between the II-VI structure and the substrate. The dislocation-enhanced internal stress leads to internal microfractures, resulting in a permanent damage of the heterostructure.