High-pressure Raman study of SnGeS₃

V. C. Stergiou Physics Department, NTUA, GR 157 80, Athens, Greece, EU

Y. S. Raptis Physics Department, NTUA, GR 157 80, Athens, Greece, EU

Z. V. Popovic Institute of Physics, 11001, Belgrade, PO Box 57, Yugoslavia

E. Anastassakis Physics Department, NTUA, GR 157 80, Athens, Greece, EU

Abstract

We report Raman-scattering studies of SnGeS₃ under hydrostatic pressures up to 19.5 GPa. An assignment to internal-external modes is proposed, based on the pressure slopes obtained. Our data show evidence for two critical pressures, one around 7 GPa and a second one around 12 GPa. The material renders itself Raman inactive at 19.5 GPa. The observed changes are reversible upon pressure release.

Key Words:

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

High-pressure Raman study of SnGeS₃

Information for

Open access

Opportunities

Help and information

High-pressure Raman study of SnGeS3

Abstract

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Your download is now in progress and you may close this window

Login or register to access this feature

High-pressure Raman study of SnGeS₃