The formation of a diamond layer on a carbide substrate during diamond interaction with Si, WC and Co

Abstract

A diamond layer was formed on a carbide substrate in an irregular temperature field at high pressures (HP). A gradient scheme of HP cell set-up has been developed, which provides for a simultaneous impregnation of opposite planes of a diamond layer by components that differ in melting temperature. The cell temperature field has been calculated and physico-mechanical properties of the obtained composite material have been studied.

Key Words:

• Diamond-carbide plates
• Thermal stability
• Sintering
• High pressure