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Abstract
The measurements of thermoelectric power S and resistance p at high pressure synthetic diamond anvils cell were performed for (PbS)0·59TiS2 and TiS2 crystals. The phase transition was found at P≍;2GPa accompanied by descend of ρ and |S| for (PbS)o·59TiS2. This transition is connected with structural change of PbS fragment from pseudocubic cell to orthorombic one and as consequence, with change of the electron concentration in Tis2-layers. From the electronic structure calculations for TiS2, the semiconductor-metal transition occurs at pressure P ≥ 4 GPa. Experimentally at this pressure range the decrease of ρ(P) was observed for (PbS)0·59TiS2 crystals.