Elastic properties of metastable crystalline and amorphous gasb-ge semiconductors synthesized under high pressure

We present the systematic study of the elastic shear G and bulk B moduli in amorphous and crystalline metastable ternary solid solutions (GaSb)_1−x Ge_2x . It is found that the moduli of crystalline phases initially decrease with Ge concentration, falling down to minimum values at 20-30% Ge. The minimal values of elastic moduli for amorphous samples are observed at 50-60% Ge. Elastic softness of crystalline solid solutions is assumed to be related to the increase of chemical disorder and, consequently, of static (non-thermal) geometrical disorder in positions of atoms. An additional topological disorder in amorphous solid solutions leads to additional elastic softening.

Keywords:

• Tetrahedral Semiconductors
• Elastic Modulus
• Solid Solutions