Abstract
Phase transformations occurring in initially amorphous Zn41Sb59 semiconductor at pressures to lOGPa and temperatures to 350°C were studied using the measurement of electrical resistance, in situ energy dispersive X-ray diffraction under pressure and neutron diffraction on quenched high-pressure phases at ambient pressure. The studied T-P region involves the regions of reversible and irreversible crystallisation and phase transitions between the equilibrium crystalline low-pressure and high-pressure phases.